III-V nitride materials: An approach through amorphous GaAs1-xNx thin films

被引：5

作者：

Lollman, D ^{[1
]}

Aguir, K ^{[1
]}

Bandet, J ^{[1
]}

Roumiguieres, B ^{[1
]}

Carchano, H ^{[1
]}

机构：

[1] UNIV TOULOUSE 3,LPS,F-31062 TOULOUSE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

amorphous III-V semiconductors; GaAs1-xNx thin films; high resistivity; Raman spectroscopy;

D O I：

10.1016/S0921-5107(96)01868-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electrical properties and Raman scattering of nitrided amorphous GaAs thin films (a-GaAs1-xNx) on Si substrates. Film deposition was carried out by RF sputtering of a GaAs target by adding a reactive gas (NH3) to an Ar plasma. Raman spectroscopy showed that the incorporated N atoms take arsenic sites. For substitution ratios below a threshold value of 25-30%, the GaAs1-xNx thin films present a rather homogeneous phase, while beyond, a transition corresponding to an inhomogeneous and nanostructured material compound of amorphous GaN an GaAs has been observed. Current measurements (J-V) on the a-GaAs1-xNx/c-Si heterostructures clearly show increasingly high resistivities (towards the insulating zone) with nitrogen incorporation. Furthermore, the C-V results obtained present MIS-like structure characteristics. (C) 1997 Elsevier Science S.A.

引用

页码：283 / 287

页数：5

共 13 条

[1] ELECTRICAL-PROPERTIES OF A-GAAS/C-SI(P) HETEROJUNCTIONS [J].