ELECTRICAL-PROPERTIES OF A-GAAS/C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES

被引：3

作者：

AGUIR, K

FENNOUH, A

CARCHANO, H

LOLLMAN, D

机构：

来源：

JOURNAL DE PHYSIQUE III | 1995年 / 5卷 / 10期

关键词：

D O I：

10.1051/jp3:1995211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterojunctions were fabricated by deposit of amorphous GaAs and GaAsN on c-GaAs. I(V) and C(V) measurements were performed to determine electrical properties of these structures. The a-GaAs/c-GaAs(n) heterojunctions present a p-n junction like behaviour. The characteristics of the a-GaAsN/c-GaAs(n) heterojunctions present a MIS Like structure behaviour with some imperfections. A fixed positive charge was detected and a density of interface states of about 10(11) eV(-1)cm(-2) was evaluated.

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页码：1573 / 1585

页数：13

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