NiTi thin films as a gate of MOS capacity sensors

被引：20

作者：

Bendahan, M ^{[1
]}

Aguir, K ^{[1
]}

Seguin, JL ^{[1
]}

Carchano, H ^{[1
]}

机构：

[1] Fac Sci & Tech St Jerome, Lab Elect & Physicochim Couches Minces, Serv 152, F-13397 Marseille 20, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 74卷 / 1-3期

关键词：

NiTi; MOS; electrode;

D O I：

10.1016/S0924-4247(98)00350-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a NiTi-shape memory alloy thin film is used as a gate in a M.O.S.-type structure. The shape memory effect involves a thermally induced phase transformation between a low temperature ductile phase and a high temperature high strength phase. The NiTi gate is deposited on a SiO2/Si substrate using RF sputtering deposition method. We have studied the evolution of C(V) characteristics as a function of temperature in order to provide evidence of phase transition within the NiTi layer, and also to investigate the effect of such a transition on the electrical properties of the structure. A rapid change in the C(V,T) curves which is a direct consequence of the modification in the NiTi structure is observed and discussed. The possibility of realizing a sensor of current to be integrated in microelectronic process and power integrated circuits is envisaged. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：242 / 245

页数：4

共 10 条

[1] NiTi shape memory alloy thin films: Composition control using optical emission spectroscopy [J].