Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks:: internal electron photoemission measurements

被引:21
作者
Afanas'ev, VV
Houssa, M
Stesmans, A
Adriaenssens, GJ
Heyns, MM
机构
[1] Univ Louvain, Dept Phys, B-3001 Heverlee, Belgium
[2] IMEC, B-3001 Heverlee, Belgium
关键词
semiconductor/insulator interfaces; electron energy barrier; internal photoemission; insulating oxides;
D O I
10.1016/S0167-9317(01)00654-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron energy barriers between the valence band of (100)Si and the conduction bands of ultrathin Al2O3 and ZrO2 insulators grown by atomic-layer deposition were determined using internal photoemission of electrons. The barriers for Al2O3 and ZrO2 are found to be 3.25 +/-0.08 and 3.1 +/-0.1 eV, respectively, i.e. significantly lower than for SiO2 (4.25 +/-0.05 eV). Thermal oxidation at 650-800 degreesC strongly suppresses tunneling current through enhancement of the barriers at the Si/Al2O3 and Si/ZrO2 interfaces. However, it does not reduce the high density of band tail states in the insulators suggesting that silicates are formed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:335 / 339
页数:5
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