Emissivity measurements and modeling of silicon-related materials: An overview

被引：95

作者：

Ravindra, NM

Sopori, B

Gokce, OH

Cheng, SX

Shenoy, A

Jin, L

Abedrabbo, S

Chen, W

Zhang, Y

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] JDS Uniphase Corp, Freehold, NJ 07728 USA

[4] BTA Technol, San Jose, CA 95112 USA

来源：

INTERNATIONAL JOURNAL OF THERMOPHYSICS | 2001年 / 22卷 / 05期

关键词：

coatings; concentration; doping concentration; emissivity; silicon; surface roughness; temperature; wavelength;

D O I：

10.1023/A:1012869710173

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

An over-view of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.

引用

页码：1593 / 1611

页数：19

共 20 条

[1] Temperature dependent emissivity of multilayers on silicon [J].

Abedrabbo, S ;

Ravindra, NM ;

Chen, W ;

Rajasekhar, V ;

Golota, T ;

Gokce, OH ;

Fiory, AT ;

Nguyenphu, B ;

Nanda, A ;

Speranza, T ;

Maszara, W ;

Williamson, G .

RAPID THERMAL AND INTEGRATED PROCESSING VI, 1997, 470 :69-79

[2] Wafer emissivity independent temperature measurements [J].

Abedrabbo, S ;

Tong, FM ;

Ravindra, NM ;

Gelpey, J ;

Marcus, S ;

Fiory, AT .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (12) :1323-1328

[3] Issues in emissivity of silicon [J].

Abedrabbo, S ;

Hensel, JC ;

Gokce, OH ;

Tong, FM ;

Sopori, B ;

Fiory, AT ;

Ravindra, NM .

RAPID THERMAL AND INTEGRATED PROCESSING VII, 1998, 525 :95-102

[4]

Abedrabbo S., 1998, Materials Science in Semiconductor Processing, V1, P187, DOI 10.1016/S1369-8001(98)00028-6

[5] Evidence from spectral emissometry for conduction intraband transitions in the intrinsic regime for silicon [J].

Abedrabbo, S ;

Hensel, JC ;

Fiory, AT ;

Ravindra, NM .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) :1390-1393

[6]

Abeles F, 1950, ANN PHYS-PARIS, V5, P596, DOI DOI 10.1051/ANPHYS/195012050596

[7] Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions [J].

Agarwal, A ;

Gossmann, HJ ;

Fiory, AT .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) :1333-1339

[8]

BORN M, 1970, PRINCIPLES OPTICS, P381

[9]

HEBB J, 1997, MULTIRAD USERS MANUA

[10] The effect of multilayer patterns on temperature uniformity during rapid thermal processing [J].

Hebb, JP ;

Jensen, KF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) :1142-1151

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