Thermally stable PdIn ohmic contacts to n-GaAs via exchange mechanism

被引：10

作者：

Chen, DY ^{[1
]}

Chang, YA ^{[1
]}

Swenson, D ^{[1
]}

机构：

[1] MICHIGAN TECHNOL UNIV,DEPT MET & MAT ENGN,HOUGHTON,MI 49931

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.363848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally stable, low-resistance ohmic contacts to GaAs (Si-doped, n=1.6-1.8X10(18) cm(-3)) were formed using PdIn metallization sputter-deposited from an alloy target. Average specific contact resistances (rho(c)) in the 10(-6) Ohm cm(2) range were reached upon annealing at 600 degrees C or higher. Contacts annealed under the optimum condition of 850 degrees C for 15 s exhibited an average rho(c) of 2.5X10(-6) Ohm cm(2). The 100 h of thermal aging at 400 or 500 degrees C increased their average rho(c) to 3.0X10(-6) and 1.0x1O(-5) Ohm cm(2), respectively. The ohmic behavior of the annealed contacts vl as ascribed to the exchange of In and Ga atoms between the metallization and the semiconductor and the concomitant formation of InxGa1-xAs, whose presence at the contact interface was confirmed using cross-sectional transmission electron microscopy. (C) 1997 American Institute of Physics.

引用

页码：297 / 300

页数：4

共 17 条

[1] OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION [J].

ALLEN, LH ;

HUNG, LS ;

KAVANAGH, KL ;

PHILLIPS, JR ;

YU, AJ ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1987, 51 (05) :326-327

[2]

CHANG YA, 1992, MATER RES SOC SYMP P, V260, P43

[3]

CHANG YA, 1996, Patent No. 5516725

[4]

CHEN DL, UNPUB

[5]

Chen DY, 1996, APPL PHYS LETT, V68, P96, DOI 10.1063/1.116783

[6] COMPARISON STUDY OF PD/IN/PD, PD-IN/PD, AND PD-IN OHMIC CONTACTS TO N-GAAS [J].

FU, HG ;

HUANG, TS .

SOLID-STATE ELECTRONICS, 1995, 38 (01) :89-94

[7] CHARACTERISTICS OF PDIN OHMIC CONTACTS TO N-GAAS WITH A THIN GE LAYER [J].

FU, HG ;

HUANG, TS .

SOLID-STATE ELECTRONICS, 1995, 38 (07) :1299-1304

[8]

JAN CH, 1991, THESIS U WISCONSIN M

[9] LOW RESISTANCE OHMIC CONTACTS TO NORMAL-INP AND PARA-INP [J].

KUPHAL, E .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :69-&

[10] REACTIONS BETWEEN PALLADIUM AND GALLIUM-ARSENIDE - BULK VERSUS THIN-FILM STUDIES [J].

LIN, JC ;

HSIEH, KC ;

SCHULZ, KJ ;

CHANG, YA .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (01) :148-163

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