OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[3] PD-GE CONTACTS TO N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (09) : 973 - &

[4] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1888 - 1891

[5] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 942 - 947

[6] IN/PT OHMIC CONTACTS TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2659 - 2661

[7] PALMSTROM CJ, 1985, GALLIUM ARSENIDE MAT, pCH6

[8] SANDS T, 1986, J MATER RES SOC S P, V54, P367

[9] WOODALL JM, 1981, J VAC SCI TECHNOL, V19, P636

[10] INSITU CONTACTS TO GAAS BASED ON INAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1545 - 1547

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[3] PD-GE CONTACTS TO N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (09) : 973 - &

[4] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1888 - 1891

[5] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 942 - 947

[6] IN/PT OHMIC CONTACTS TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2659 - 2661

[7] PALMSTROM CJ, 1985, GALLIUM ARSENIDE MAT, pCH6

[8] SANDS T, 1986, J MATER RES SOC S P, V54, P367

[9] WOODALL JM, 1981, J VAC SCI TECHNOL, V19, P636

[10] INSITU CONTACTS TO GAAS BASED ON INAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1545 - 1547