Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

被引：17

作者：

Chatterjee, S

Samanta, SK

Banerjee, HD ^{[1
]}

Maiti, CK

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2001年 / 24卷 / 06期

关键词：

zirconium dioxide; high-k; PECVD; EOT;

D O I：

10.1007/BF02704004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

引用

页码：579 / 582

页数：4

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