Electrical properties of ZrO2 gate dielectric on SiGe

被引：109

作者：

Ngai, T ^{[1
]}

Qi, WJ ^{[1
]}

Sharma, R ^{[1
]}

Fretwell, J ^{[1
]}

Chen, X ^{[1
]}

Lee, JC ^{[1
]}

Banerjee, S ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Angstrom were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 degrees C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Angstrom exhibit excellent electrical properties making them a good candidate for SiGe applications. (C) 2000 American Institute of Physics. [S0003-6951(00)01002-0].

引用

页码：502 / 504

页数：3

共 18 条

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