Effect of external stress applied during annealing on hydrogen- and oxygen-implanted silicon

被引：25

作者：

Misiuk, A

Surma, HB

Antonova, IV

Popov, VP

Bak-Misiuk, J

Lopez, M

Romano-Rodriguez, A

Barcz, A

Jun, J

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Russian Acad Sci, Inst Semicond Phys, RU-01919 Novosibirsk, Russia

[4] Russian Acad Sci, Inst Semicond Phys, RU-630090 Novosibirsk, Russia

[5] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[6] Univ Barcelona, ES-08028 Barcelona, Spain

[7] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

SOLID STATE PHENOMENA | 1999年 / 70卷

关键词：

silicon; implantation; hydrogen; oxygen; hydrostatic pressure; stress; defects;

D O I：

10.4028/www.scientific.net/SSP.69-70.345

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of annealing (up to 1550 K) under enhanced argon pressure (up to 1.5 GPa) on hydrogen and oxygen - implanted Czochralski or FZ silicon (Si:H and Si:O) was investigated by SIMS, X-ray, photoluminescence (PL), electrical and related methods. External stress during annealing of Si:H results in suppression of hydrogen out - diffusion and in its pronounced diffusion into sample depth, in stress - stimulated creation of small defects/thermal donors, as well as in PL at about 0.8 eV. Stress - annealed Si:O samples indicate strong dependence of X-ray diffuse scattering and of dislocation - related PL on the pressure of ambient gas.

引用

页码：345 / 350

页数：6

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