Hydrogen induced silicon surface layer cleavage

Physical mechanisms of hydrogen induced silicon surface layer cleavage were investigated using a combination of microscopy and spectroscopy techniques. The evolution of the silicon cleavage phenomenon is recorded by a series of microscopic images. The underlying hydrogen profiles under (between 250 and 500 degrees C) annealing are characterized by secondary-ion-mass spectroscopy and hydrogen forward scattering experiments. An idea gas law model calculation suggests that internal pressure of molecular hydrogen filled microcavities is in the range of Giga-Pascal, high enough to break silicon crystal bond. A dose threshold, which prevents cleavage, is observed at 1.6 x 10(17) cm(-2) for 40 kV hydrogen implantation. (C) 1997 American Institute of Physics.