Design concept for wire-bonding reliability improvement by optimizing position in power devices

被引:47
作者
Ishiko, M [1 ]
Usui, M
Ohuchi, T
Shirai, M
机构
[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan
[2] Toyota Motor Co Ltd, Toyota 4700309, Japan
关键词
wire bonding; power module; power semiconductor; simulation; reliability; temperature distributions; hybrid vehicle; performance;
D O I
10.1016/j.mejo.2005.09.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
The most effective way to increase the reliability of wire bonds in IGBT modules is reduction of temperature difference between the aluminum wires and the device. However, this lowers the power handling capability of the modules. In this paper, we show that the configuration of aluminum wire bonds on power devices has a considerable effect on the temperature distribution of the device, and that the optimization of the layout by thermo-electric simulation can make the temperature distribution of the devices more uniform and consequently reduce the maximum junction temperature difference, Delta T-jmax. Tentative experiments showed that rearranging the bonding position resulted in reduction of Delta T-jmax by five to 8 degrees C, and that the chip ternperature distribution estimated by the thermo-electric simulation was qualitatively similar to the actual measurement results. These results suggest that wire-bonding optimization by thermo-electric simulation can contribute not only to realizing more compact power modules but also to improving the module reliability. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:262 / 268
页数:7
相关论文
共 22 条
[1]
AKIYAMA H, 1991, PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P187, DOI 10.1109/ISPSD.1991.146095
[2]
500-V N-CHANNEL INSULATED-GATE BIPOLAR-TRANSISTOR WITH A TRENCH GATE STRUCTURE [J].
CHANG, HR ;
BALIGA, BJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1824-1829
[3]
Lifetime extrapolation for IGBT modules under realistic operation conditions [J].
Ciappa, M ;
Malberti, P ;
Fichtner, W ;
Cova, P ;
Cattani, L ;
Fantini, F .
MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) :1131-1136
[4]
CIAPPA M, P INT REL PHYS S 200, P210
[5]
HAMADA K, P ISPSD 2001, P449
[6]
Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules [J].
Hamidi, A ;
Beck, N ;
Thomas, K ;
Herr, E .
MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) :1153-1158
[7]
HAMIDI A, 16 APPL POW EL EXP 2, P1040
[8]
HUSSEIN KH, P ISPSD 2004, P89
[9]
ISHIKO M, P ISPSD 2003, P341
[10]
Reliability aspects of semiconductor devices in high temperature applications [J].
Kanert, W ;
Dettmer, H ;
Plikat, B ;
Seliger, N .
MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) :1839-1846