Reliability aspects of semiconductor devices in high temperature applications

被引:4
作者
Kanert, W
Dettmer, H
Plikat, B
Seliger, N
机构
[1] Infineon Technol, D-81541 Munich, Germany
[2] Infineon Technol, D-93049 Regensburg, Germany
[3] Siemens AG, Corp Technol, D-81730 Munich, Germany
关键词
D O I
10.1016/S0026-2714(03)00313-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
A growing demand for semiconductor devices capable of operating at higher temperatures can be observed in automotive electronics. Reliability aspects concerning silicon and package are considered. On the silicon side, the effect of different hot carrier degradation modes and the negative bias temperature instability are found to severely influence device lifetime. On the packaging side, challenges arise due to not only high temperatures but also increased temperature cycling loads. For plastic packages, material degradation of the mould compound occurs at high temperatures and significant delaminations due to cycling stress lead to package induced damage. Key steps for a reliable high temperature plastic package are the choice of an optimised combination of mould compound and adhesion promoter and the development of a suitable lead-free die attach system. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1839 / 1846
页数:8
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