HOT-CARRIER DEGRADATION IN LDD-MOSFETS AT HIGH-TEMPERATURES

被引：2

作者：

DIKMEN, CT

DOGAN, NS

OSMAN, M

BHATTACHARYYA, A

机构：

[1] WASHINGTON STATE UNIV, SCH ELECT ENGN & COMP SCI, PULLMAN, WA 99164 USA

[2] IBM CORP, ESSEX JCT, VT 05452 USA

来源：

关键词：

D O I：

10.1016/0038-1101(94)90068-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1993 / 1995

页数：3

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CHIU, KY .

[5] THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2 [J].

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[6]

Song M., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P707, DOI 10.1109/IEDM.1992.307457

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[8]

Wang S., 1989, FUNDAMENTALS SEMICON