MOSFET SUBSTRATE CURRENT MODEL FOR CIRCUIT SIMULATION

被引：89

作者：

ARORA, ND ^{[1
]}

SHARMA, MS ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP,ADV SEMICOND DEV GRP,HUDSON,MA 01749

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/16.81631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple yet accurate MOSFET substrate current model suitable for circuit simulator is presented. The effect of substrate bias on substrate current has been modeled without introducing additional parameters. The accuracy of this model has been demonstrated by its ability to fit the experimental data for both standard and LDD devices with average errors less than 6%. The new model has also been compared with the substrate current models reported in the literature. In addition, the temperature dependence of the substrate current in the range 0-120-degrees-C has also been modeled. The new model has been implemented in a circuit-level hot-electron reliability simulator and the results obtained from simulation of an inverter circuit are presented.

引用

页码：1392 / 1398

页数：7

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