学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
AN EXPERIMENTAL-METHOD FOR THE DETERMINATION OF THE SATURATION POINT OF A MOSFET
被引:5
作者
:
BOOTH, RVH
论文数:
0
引用数:
0
h-index:
0
BOOTH, RVH
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
WHITE, MH
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1984年
/ 31卷
/ 02期
关键词
:
D O I
:
10.1109/T-ED.1984.21508
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:247 / 251
页数:5
相关论文
共 6 条
[1]
CONDUCTANCE OF MOS TRANSISTORS IN SATURATION
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
FROHMANB.D
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
GROVE, AS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
: 108
-
+
[2]
MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
HOEFFLINGER, B
SIBBERT, H
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
SIBBERT, H
ZIMMER, G
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
ZIMMER, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 513
-
520
[3]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
: 681
-
+
[4]
SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(03)
: 139
-
+
[5]
VLADAMIRESCU A, 1980, UCBERL M807 U CAL EL
[6]
HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
WHITE, MH
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
VANDEWIELE, F
LAMBOT, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
LAMBOT, JP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
: 899
-
906
←
1
→
共 6 条
[1]
CONDUCTANCE OF MOS TRANSISTORS IN SATURATION
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
FROHMANB.D
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
GROVE, AS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
: 108
-
+
[2]
MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
HOEFFLINGER, B
SIBBERT, H
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
SIBBERT, H
ZIMMER, G
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
ZIMMER, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 513
-
520
[3]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
: 681
-
+
[4]
SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(03)
: 139
-
+
[5]
VLADAMIRESCU A, 1980, UCBERL M807 U CAL EL
[6]
HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
WHITE, MH
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
VANDEWIELE, F
LAMBOT, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
LAMBOT, JP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
: 899
-
906
←
1
→