Infrared monitoring system for the detection of organic contamination on a 300 mm Si wafer

被引：18

作者：

Endo, M

Yoshida, H

Maeda, Y

Miyamoto, N

Niwano, M

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] ADVANTEST Labs Ltd, Aoba Ku, Sendai, Miyagi 9893124, Japan

[3] Tohoku Gakuin Univ, Tagajo, Miyagi 9850873, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 10(11) carbon atoms/cm(2). [S0003-6951(99)03830-9].(C) 1999 American Institute of Physics.

引用

页码：519 / 521

页数：3

共 18 条

[1]

BAN C, 1998, P 7 INT S SEM MAN UL, P137

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J].