Visible light emission from MBD-grown Si/SiO2 superlattices

被引：21

作者：

Novikov, SV ^{[1
]}

Sinkkonen, J ^{[1
]}

Kilpela, O ^{[1
]}

Gastev, SV ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

Si; SiO2; MBE; superlattices; photoluminescence;

D O I：

10.1016/S0022-0248(96)00915-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si/SiO2 superlattices were grown by MBD using in situ oxidation by RF-plasma source. Room temperature photoluminescence (PL) was observed in the spectral range 1.9-2.3 eV, PL spectra show blueshifts due to the quantum confinement of the energy states in ultrathin silicon layers.

引用

页码：514 / 518

页数：5

共 6 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].