Molybdenum-Doped Zinc Oxide Electrodes for Organic Light-Emitting Devices

被引：4

作者：

Chun, Ji-Yun ^{[1
]}

Han, Jin-Woo ^{[1
]}

Seo, Dae-Shik ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期

关键词：

conducting materials; electrical resistivity; electrochemical electrodes; II-VI semiconductors; molybdenum; organic light emitting diodes; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; X-ray diffraction; zinc compounds; ELECTROLUMINESCENT DEVICE; IN-SITU; DIODES; FILMS; PERFORMANCE; DEPENDENCE; SURFACE; METAL; LAYER;

D O I：

10.1149/1.3078491

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The properties of molybdenum-doped ZnO (MZO) films deposited by radio-frequency (rf) magnetron sputtering and organic light-emitting devices (OLEDs) using an MZO film as an anode were investigated. A transparent conducting MZO film with high transparency and relatively low resistivity was prepared by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressures were investigated. X-ray diffraction patterns showed that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c axis. Thus, MZO films may be a potential material for OLEDs.

引用

页码：J47 / J49

页数：3

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