Anode modification in organic light-emitting diodes by low-frequency plasma polymerization of CHF3

被引：139

作者：

Hung, LS ^{[1
]}

Zheng, LR

Mason, MG

机构：

[1] Eastman Kodak Co, Elect Imaging Prod, Rochester, NY 14650 USA

[2] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.1331639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasma polymerization of CHF3 at low frequencies was utilized for anode modification in organic light-emitting diodes. The polymerized fluorocarbon films have a high ionization potential and a relatively low resistivity. The devices with a polymer-coated anode of indium-tin-oxide exhibited enhanced hole injection and superior operational stability. (C) 2001 American Institute of Physics.

引用

页码：673 / 675

页数：3

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