Electronic instabilities of the two-dimensional Sn/Ge(111) α-phase

被引：14

作者：

Avila, J

Huttel, Y

Mascaraque, A

Le Lay, G

Michel, EG

Asensio, MC ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat, Madrid 28049, Spain

[2] Ctr Univ Paris Sud, LURE, F-91898 Orsay, France

[3] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[4] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain

[5] CNRS, CRMC2, F-13288 Marseille 09, France

[6] Univ Aix Marseille 1, UFR SM, F-13003 Marseille, France

来源：

SURFACE SCIENCE | 1999年 / 433卷

关键词：

charge density wave; electronic structure; germanium; photoemission; tin;

D O I：

10.1016/S0039-6028(99)00149-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Sn/Ge(111) interface presents at room temperature an ordered root 3 x root 3R(30 degrees) surface reconstruction, formed by a submonolayer array of tin adatoms, which reversibly transforms upon cooling into a 3 x 3 structure. Recently, it has been claimed that the formation of a commensurate charge density wave is responsible for this transition. We present high-resolution synchrotron radiation photoemission results which support, instead, that the driving force of the transition is rehybridization: fluctuations in the tin adatom type of bonding freeze-in at low temperature to yield the static long-range ordering of the 3 x 3 ground state which is governed by an ideal 1/2 ratio of the sp(3)/sp(2) hybridization balance. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：327 / 331

页数：5

共 21 条

[1] Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III) [J].