PHOTOEMISSION-STUDY OF PB ON GE(111)

被引：21

作者：

CARLISLE, JA ^{[1
]}

MILLER, T ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.47.3790

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoemission spectroscopy with synchrotron radiation, Auger electron spectroscopy, and high-energy electron diffraction have been used to study the Pb-induced reconstructions of the Pb/Ge(111) system. The Ge 3d and Pb 5d core levels and valence bands are analyzed as a function of Pb coverage and annealing temperature. We have observed three (square-root 3 X square-root 3)R 30-degrees reconstructions with ideal Pb coverages of 1/6, 1/3, and 4/3 monolayer (in substrate units), the latter being the completion coverage for the first two-dimensional adlayer following the Stranski-Krastanov growth mode. The band bending for this system will be discussed in the monolayer regime. Surface core levels and surface states were observed which suggest a simple T4 adatom geometry for the lower coverage (square-root 3 X square-root 3)R 30-degrees reconstructions.

引用

页码：3790 / 3796

页数：7

共 25 条

[1] PHOTOEMISSION-STUDY OF THE GROWTH, DESORPTION, SCHOTTKY-BARRIER FORMATION, AND ATOMIC-STRUCTURE OF PB ON SI(111) [J].