Correlation between a-C:H film properties and Ar/CH4 dielectric barrier discharge

被引：3

作者：

Bratescu, MA

Yoshizaki, Y

Suda, Y

Sakai, Y

Sugawara, H

Takai, O

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

THIN SOLID FILMS | 2006年 / 506卷

关键词：

methane; optical spectroscopy; ellipsometry; infrared spectroscopy;

D O I：

10.1016/j.tsf.2005.08.145

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A dielectric barrier discharge (DBD) in Ar/CH4 gas mixtures used for amorphous hydrogenated carbon (a-C:H) film deposition was investigated. It was found that the a-C:H film properties (the ratios of sp(3)/Isp(2) and CH3/CH2, the number density of hydrogen atoms in the film and the energy band gap) correlate with the number densities of Ar(I-S5) atom and CH(chi(2) Pi) radical. A high value of the energy band gap, which corresponds to a high content of sp(3) fraction in the film was obtained, when the CH radical number density in the plasma was relatively small (similar to 10(8) cm(-3)). The DBD breakdown voltage decreased when the a-C:H film was deposited on the dielectric surface of the electrode. (c) 2005 Published by Elsevier B.V.

引用

页码：145 / 149

页数：5

共 17 条

[1] CVD diamond:: a novel high γ-coating for plasma display panels? [J].