Nanocrystalline CdS MISFETs fabricated by a novel continuous flow microreactor

被引:34
作者
Chang, YJ [1 ]
Mugdur, PH
Han, SY
Morrone, AA
Ryu, SO
Lee, TJ
Chang, CH
机构
[1] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97331 USA
[2] Yeungnam Univ, Sch Chem Eng & Technol, Kyongsan 712749, South Korea
[3] Seagate Technol, Minneapolis, MN 55435 USA
关键词
D O I
10.1149/1.2183847
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this work, we developed a continuous flow microreactor that is capable of overcoming the drawbacks associated with chemical bath deposition. Uniform, smooth, and highly oriented nanocrystalline CdS semiconductor thin films were successfully deposited on oxidized silicon substrates at low temperature (80 degrees C) using this microreactor. Functional thin-film transistors with an effective mobility of 1.46 cm(2)/V s were fabricated from the as-deposited films without any postannealing process. This process is a potentially low-cost avenue for the fabrication of thin-film electronics on flexible polymeric substrates. (c) 2006 The Electrochemical Society.
引用
收藏
页码:G174 / G177
页数:4
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