Chemical effects during formation of the electronic surface structure of III-V semiconductors in a sulfide solution.

被引：6

作者：

Bessolov, VN ^{[1
]}

Konenkova, EV

Lebedev, MV

Zahn, DRT

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] TU Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

来源：

PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 05期

关键词：

D O I：

10.1134/1.1130875

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic properties of the (100) surface of n-GaAs, p-GaAs, and n-InP semiconductors treated with various sulfide solutions have been studied. Sulfide treatment was shown to increase the photoluminescence intensity, decrease the depth of the near-surface depleted region in the semiconductor, and shift the surface Fermi level toward the conduction band. These effects are the stronger, the higher the sulfur chemical activity in the solution. (C) 1999 American Institute of Physics. [S1063-7834(99)03005-1].

引用

页码：793 / 795

页数：3

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