Second generation 50 K dual-mode sapphire oscillator

被引：7

作者：

Anstie, JD ^{[1
]}

Hartnett, JG ^{[1
]}

Tobar, ME ^{[1
]}

Ivanov, EN ^{[1
]}

Stanwix, PL ^{[1
]}

机构：

[1] Univ Western Australia, Sch Phys, Crawley, WA 6009, Australia

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2006年 / 53卷 / 02期

关键词：

D O I：

10.1109/TUFFC.2006.1593366

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Low-temperature, high-precision sapphire resonators exhibit a turning point in mode frequency-temperature dependence at around 10 K. This, along with sapphire's extremely low dielectric losses at microwave frequencies, results in oscillator fractional frequency stabilities on the order of 10(-15). At higher temperatures the lack of a turning point makes single-mode oscillators very sensitive to temperature fluctuations. By exciting two quasi-orthogonal whispering gallery (WG) modes in a single sapphire resonator, a turning point in the frequency-temperature dependence can be found in the beat frequency between the two modes. A temperature control technique based on mode frequency temperature dependence has been used to maintain the sapphire at this turning point and the fractional frequency instability of the beat frequency has been measured to be at a level of 4.3 x 10(-14) over 1 s, dropping to 3.5 x 10(-14) over 4 s integration time.

引用

页码：284 / 288

页数：5

共 19 条

[1] Ultra-low drift microwave cryogenic oscillator [J].

Bourgeois, PY ;

Lardet-Vieudrin, F ;

Kersalé, Y ;

Bazin, N ;

Chaubet, M ;

Giordano, V .

ELECTRONICS LETTERS, 2004, 40 (10) :605-606

[2] Improved cryogenic sapphire oscillator with exceptionally high frequency stability [J].

Chang, S ;

Mann, AG ;

Luiten, AN .

ELECTRONICS LETTERS, 2000, 36 (05) :480-481

[3] TEMPERATURE-COMPENSATED SAPPHIRE RESONATOR FOR ULTRA-STABLE OSCILLATOR CAPABILITY AT TEMPERATURES ABOVE 77 K [J].

DICK, GJ ;

SANTIAGO, DG ;

WANG, RT .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1995, 42 (05) :812-819

[4] Cryo-cooled sapphire oscillator with ultra-high stability [J].

Dick, GJ ;

Wang, RT ;

Tjoelker, RL .

PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM, 1998, :528-533

[5] High-Q frequency-temperature compensated solid-nitrogen-cooled resonator-oscillators:: first results [J].

Hartnett, JG ;

Bourgeois, I ;

Anstie, JD ;

Tobar, ME ;

Bazin, N ;

Ivanov, EN ;

Cros, D ;

Giordano, V ;

Kersalé, Y .

ELECTRONICS LETTERS, 2004, 40 (01) :41-42

[6] Temperature fluctuations in a solid-nitrogen cooled secondary frequency standard [J].

Hartnett, JG ;

Tobar, ME ;

Ivanov, EN ;

Bilski, P .

CRYOGENICS, 2002, 42 (01) :45-48

[7] Complex paramagnetic susceptibility in titanium-doped sapphire at microwave frequencies [J].

Hartnett, JG ;

Tobar, ME ;

Krupka, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (06) :959-967

[8] Temperature dependence of Ti3+ doped sapphire whispering gallery mode resonator [J].

Hartnett, JG ;

Tobar, ME ;

Mann, AG ;

Krupka, J ;

Ivanov, EN .

ELECTRONICS LETTERS, 1998, 34 (02) :195-196

[9] Frequency-temperature compensation in Ti3+ and Ti4+ doped sapphire whispering gallery mode resonators [J].

Hartnett, JG ;

Tobar, ME ;

Mann, AG ;

Ivanov, EN ;

Krupka, J ;

Geyer, R .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1999, 46 (04) :993-1000

[10] EFFECT OF PARAMAGNETIC IMPURITIES ON FREQUENCY OF SAPPHIRE-LOADED SUPERCONDUCTING CAVITY RESONATORS [J].

JONES, SK ;

BLAIR, DG ;

BUCKINGHAM, MJ .

ELECTRONICS LETTERS, 1988, 24 (06) :346-347

← 1 2 →