Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

被引：4

作者：

Boriçi, M ^{[1
]}

Watling, JR ^{[1
]}

Wilkins, RCW ^{[1
]}

Yang, L ^{[1
]}

Barker, JR ^{[1
]}

Asenov, A ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we focus on the problem of interface roughness scattering which is treated non-perturbatively by incorporating the effects of scattering as a boundary condition for the Boltzmann transport equation. The scattering probability is derived and implemented in an ensemble Monte Carlo simulation of electron transport in relaxed and strained Si n-MOSFETs. We compare the internal device behaviour as a function of the interface quality between short channel relaxed and strained Si n-MOSFETs. We provide further evidence that the strained Si/SiO2 interface is less rough, requiring a longer correlation length and smaller rms height for the strained Si/SiO2 interface. The high doping densities encountered necessitate the self-consistent use of degenerate (Fermi-Dirac) statistics.

引用

页码：S155 / S157

页数：3

共 8 条

[1] A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs [J].

Borici, M. ;

Watling, J. R. ;

Wilkins, R. ;

Yang, L. ;

Barker, J. R. .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) :163-167

[2] ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS [J].

CHATTOPADHYAY, D ;

QUEISSER, HJ .

REVIEWS OF MODERN PHYSICS, 1981, 53 (04) :745-768

[3] On the enhanced electron mobility in strained-silicon inversion layers [J].

Fischetti, MV ;

Gámiz, F ;

Hänsch, W .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7320-7324

[4] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[5]

Lundstrom M., 2000, FUNDAMENTALS CARRIER

[6]

Ridley B.K., 1998, QUANTUM PROCESSES SE

[7] Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs [J].

Rim, K ;

Chu, J ;

Chen, H ;

Jenkins, KA ;

Kanarsky, T ;

Lee, K ;

Mocuta, A ;

Zhu, H ;

Roy, R ;

Newbury, J ;

Ott, J ;

Petrarca, K ;

Mooney, P ;

Lacey, D ;

Koester, S ;

Chan, K ;

Boyd, D ;

Leong, M ;

Wong, HS .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :98-99

[8] Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs [J].

Watling, J. R. ;

Yang, L. ;

Borici, M. ;

Barker, J. R. ;

Asenov, A. .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) :475-479

← 1 →