Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene

被引：31

作者：

Kalbac, Martin ^{[1
,2
]}

Kong, Jing ^{[2
]}

Dresselhaus, Mildred S. ^{[2
,3
]}

机构：

[1] Acad Sci Czech Republic, Vvi, J Heyrovsky Inst Phys Chem, CZ-18223 Prague 8, Czech Republic

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[3] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2012年 / 116卷 / 35期

关键词：

CHEMICAL-VAPOR-DEPOSITION; TRANSISTOR; FILMS;

D O I：

10.1021/jp307324u

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We developed a new general approach to address individual graphene sheets in few-layer graphene by Raman spectroscopy. Our method is based on isotope labeling of individual layers during their synthesis and subsequent transfer to form multilayered graphene. The power of the procedure is demonstrated in the analysis of the interactions of individual layers with the substrate and with the environment. In addition, we measured Raman spectra of individual graphene layers in 3-LG during electrochemical doping. We show that they do not exhibit the same level of doping as one another and the doping level is dependent on layer position with respect to the substrate.

引用

页码：19046 / 19050

页数：5

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