Atomic structures of GaAs(100)-(2x4) reconstructions

被引:39
作者
Schmidt, WG
Bechstedt, F
机构
[1] Friedrich-Schiller-Universität, Inst. Festkorpertheorie Theor. Optik, 07743 Jena
关键词
density functional calculations; gallium arsenide; low index single crystal surfaces; molecular dynamics; surface relaxation and reconstruction;
D O I
10.1016/0039-6028(96)00728-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomic structures of the As-rich GaAs(100)-(2x4) reconstructions based on converged first-principles total-energy calculations are reported. All geometries are characterized by similar structural elements such as As dimers with a length of about 2.5 Angstrom, dimer vacancies, and a nearly planar configuration of the three-fold coordinated second-layer Ga atoms leading to a steepening of the dimer block. For an As coverage of theta=3/4 we find the two-dimer beta 2 phase to be energetically preferred over the three-dimer beta phase. A structure with partial replacement of As by Ga in the uppermost layer corresponding to an As coverage of theta=1/2 is found to be slightly less favourable than the alpha phase of GaAs(100). Geometry parameters are given for all structures and compared with the available experimental results.
引用
收藏
页码:L473 / L477
页数:5
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