Individual GaAs nanorods imaged by coherent X-ray diffraction

被引：25

作者：

Biermanns, Andreas ^{[1
]}

Davydok, Anton ^{[1
]}

Paetzelt, Hendrik ^{[2
,3
]}

Diaz, Ana ^{[4
]}

Gottschalch, Volker ^{[3
]}

Metzger, Till Hartmut ^{[4
]}

Pietsch, Ullrich ^{[1
]}

机构：

[1] Univ Siegen, Solid State Phys Grp, D-57068 Siegen, Germany

[2] Leibniz Inst Surface Modificat, Ion Beam Technol Dept, D-04318 Leipzig, Germany

[3] Univ Leipzig, Semicond Chem Grp, D-04103 Leipzig, Germany

[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

JOURNAL OF SYNCHROTRON RADIATION | 2009年 / 16卷

关键词：

X-ray diffraction; coherent diffraction imaging; semiconductor nanorods; phase-retrieval analysis; EPITAXIAL-GROWTH; INAS NANOWIRES; PHASE;

D O I：

10.1107/S0909049509032889

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Using scanning X-ray diffraction microscopy with a spot size of 220 x 600 nm, it was possible to inspect individual GaAs nanorods grown seed-free through circular openings in a SiNx mask in a periodic array with 3 mu m spacing on GaAs[111]B. The focused X-ray beam allows the determination of the strain state of individual rods and, in combination with coherent diffraction imaging, it was also possible to characterize morphological details. Rods grown either in the centre or at the edge of the array show significant differences in shape, size and strain state.

引用

页码：796 / 802

页数：7

共 33 条

[1] InGaAs nano-pillar array formation on partially masked InP(III)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application [J].

Akabori, M ;

Takeda, J ;

Motohisa, J ;

Fukui, T .

NANOTECHNOLOGY, 2003, 14 (10) :1071-1074

[2] X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B [J].

Davydok, Anton ;

Biermanns, Andreas ;

Pietsch, Ullrich ;

Grenzer, Joerg ;

Paetzelt, Hendrik ;

Gottschalch, Volker .

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2010, 41A (05) :1191-1195

[3] Submicron resolution X-ray diffraction from periodically patterned GaAs nanorods grown onto Ge[111] [J].

Davydok, Anton ;

Biermanns, Andreas ;

Pietsch, Ullrich ;

Grenzer, Joerg ;

Paetzelt, Hendrik ;

Gottschalch, Volker ;

Bauer, Jens .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (08) :1704-1708

[4] Coherent diffraction imaging of a single epitaxial InAs nanowire using a focused x-ray beam [J].

Diaz, A. ;

Mocuta, C. ;

Stangl, J. ;

Mandl, B. ;

David, C. ;

Vila-Comamala, J. ;

Chamard, V. ;

Metzger, T. H. ;

Bauer, G. .

PHYSICAL REVIEW B, 2009, 79 (12)

[5] Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques [J].

Eymery, Joel ;

Rieutord, Francois ;

Favre-Nicolin, Vincent ;

Robach, Odile ;

Niquet, Yann-Michel ;

Froberg, Linus ;

Martensson, Thomas ;

Samuelson, Lars .

NANO LETTERS, 2007, 7 (09) :2596-2601

[6] Semiconductor nanowires: From self-organization to patterned growth [J].

Fan, HJ ;

Werner, P ;

Zacharias, M .

SMALL, 2006, 2 (06) :700-717

[7] Coherent-diffraction imaging of single nanowires of diameter 95 nanometers [J].

Favre-Nicolin, Vincent ;

Eymery, Joel ;

Koester, Robert ;

Gentile, Pascal .

PHYSICAL REVIEW B, 2009, 79 (19)

[8] PHASE RETRIEVAL ALGORITHMS - A COMPARISON [J].

FIENUP, JR .

APPLIED OPTICS, 1982, 21 (15) :2758-2769

[9]

GERCHBERG RW, 1972, OPTIK, V35, P237

[10] Measurement of carrier mobility in silicon nanowires [J].

Gunawan, Oki ;

Sekaric, Lidija ;

Majumdar, Amlan ;

Rooks, Michael ;

Appenzeller, Joerg ;

Sleight, Jeffrey W. ;

Guha, Supratik ;

Haensch, Wilfried .

NANO LETTERS, 2008, 8 (06) :1566-1571

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