Measurement of carrier mobility in silicon nanowires

被引：115

作者：

Gunawan, Oki ^{[1
]}

Sekaric, Lidija ^{[1
]}

Majumdar, Amlan ^{[1
]}

Rooks, Michael ^{[1
]}

Appenzeller, Joerg ^{[1
]}

Sleight, Jeffrey W. ^{[1
]}

Guha, Supratik ^{[1
]}

Haensch, Wilfried ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 06期

关键词：

D O I：

10.1021/nl072646w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the first direct capacitance measurements of silicon nanowires (SiNWs) and the consequent determination of field carrier mobilities in undoped-channel SiNW field-effect transistors (FETs) at room temperature. We employ a two-FET method for accurate extraction of the intrinsic channel resistance and intrinsic channel capacitance of the SiNWs. The devices used in this study were fabricated using a top-down method to create SiNW FETs with up to 1000 wires in parallel for increasing the raw capacitance while maintaining excellent control on device dimensions and series resistance. We found that, compared with the universal mobility curves for bulk silicon, the electron and hole mobilities in nanowires are comparable to those of the surface orientation that offers a lower mobility.

引用

页码：1566 / 1571

页数：6

共 26 条

[1] Orientation-dependent C60 electronic structures revealed by photoemission spectroscopy (vol 93, pg 197601, 2004) -: art. no. 099903 [J].

Brouet, V ;

Yang, WL ;

Zhou, XJ ;

Choi, HJ ;

Louie, SG ;

Cohen, ML ;

Goldoni, A ;

Parmigiani, F ;

Hussain, Z ;

Shen, ZX .

PHYSICAL REVIEW LETTERS, 2005, 95 (09)

[2] Extraordinary mobility in semiconducting carbon nanotubes [J].

Durkop, T ;

Getty, SA ;

Cobas, E ;

Fuhrer, MS .

NANO LETTERS, 2004, 4 (01) :35-39

[3] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J].

FOWLER, AB ;

HOCHBERG, F ;

FANG, F .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :427-&

[4] Growth and transport properties of complementary germanium nanowire field-effect transistors [J].

Greytak, AB ;

Lauhon, LJ ;

Gudiksen, MS ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2004, 84 (21) :4176-4178

[5] Silicon CMOS devices beyond scaling [J].

Haensch, W. ;

Nowak, E. J. ;

Dennard, R. H. ;

Solomon, P. M. ;

Bryant, A. ;

Dokumaci, O. H. ;

Kumar, A. ;

Wang, X. ;

Johnson, J. B. ;

Fischetti, M. V. .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2006, 50 (4-5) :339-361

[6] Giant piezoresistance effect in silicon nanowires [J].

He, Rongrui ;

Yang, Peidong .

NATURE NANOTECHNOLOGY, 2006, 1 (01) :42-46

[7] Measurement of the quantum capacitance of interacting electrons in carbon nanotubes [J].

Ilani, S. ;

Donev, L. A. K. ;

Kindermann, M. ;

McEuen, P. L. .

NATURE PHYSICS, 2006, 2 (10) :687-691

[8]

IRIE H, 2004, IEDM TECH DIG, V51, P225

[9] High-κ dielectrics for advanced carbon-nanotube transistors and logic gates [J].

Javey, A ;

Kim, H ;

Brink, M ;

Wang, Q ;

Ural, A ;

Guo, J ;

McIntyre, P ;

McEuen, P ;

Lundstrom, M ;

Dai, HJ .

NATURE MATERIALS, 2002, 1 (04) :241-246

[10] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

← 1 2 3 →