Synthesis and ellipsometric characterization of insulating low permittivity SiO2 layers by remote-PECVD using radio-frequency glow discharge

被引：16

作者：

Dultsev, FN ^{[1
]}

Solowjev, AP ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, SB RAS, Novosibirsk 630090, Russia

来源：

THIN SOLID FILMS | 2002年 / 419卷 / 1-2期

关键词：

chemical vapour deposition (CVD); ellipsometry; silicon dioxide;

D O I：

10.1016/S0040-6090(02)00760-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Remote plasma-enhanced chemical vapour deposition is used in the present study to produce SiO2 layers with approximately 60% porosity in a planar reactor. Ellipsometric porometry is applied as the main method to investigate the resulting layers. The influence of gas-phase monosilane oxidation stages on the regularity of mesopore formation at temperatures ranging from 17 to 120 degreesC is discussed. The possibility to obtain layers with the desired porosity by changing the process parameters (pressure. temperature. reactor geometry) is also presented, (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：27 / 32

页数：6

共 16 条

[1] Determination of pore size distribution in thin films by ellipsometric porosimetry [J].

Baklanov, MR ;

Mogilnikov, KP ;

Polovinkin, VG ;

Dultsev, FN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1385-1391

[2] POROUS STRUCTURE OF SIO2-FILMS SYNTHESIZED AT LOW-TEMPERATURE AND PRESSURE [J].

BAKLANOV, MR ;

VASILYEVA, LL ;

GAVRILOVA, TA ;

DULTSEV, FN ;

MOGILNIKOV, KP ;

NENASHEVA, LA .

THIN SOLID FILMS, 1989, 171 (01) :43-52

[3]

BAKLANOV MR, Patent No. 981998540

[4]

BRAUN VR, 1984, OXID COMMUN, V6, P259

[5] BASIC PROPERTIES OF EQUATIONS FOR PHYSICAL VAPOR ADSORPTION IN MICROPORES OF CARBON ADSORBENTS ASSUMING A NORMAL MICROPORE DISTRIBUTION [J].

DUBININ, MM ;

POLYAKOV, NS ;

KATAEVA, LI .

CARBON, 1991, 29 (4-5) :481-488

[6]

DUBININ MM, 1983, IAN SSSR KH, P483

[7] Nondestructive determination of pore size distribution in thin films deposited on solid substrates [J].

Dultsev, FN ;

Baklanov, MR .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (04) :192-194

[8] Porous structure of silica films obtained by monosilane oxidation [J].

Dultsev, FN ;

Nenasheva, LA ;

Vasilyeva, LL .

THIN SOLID FILMS, 1998, 315 (1-2) :72-76

[9] Irregular surface and porous structure of SiO2 films deposited at low temperature and low pressure [J].

Dultsev, FN ;

Nenasheva, LA ;

Vasilyeva, LL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (07) :2569-2572

[10] THE STRUCTURE OF SILICA GLASS [J].

GERBER, T ;

HIMMEL, B .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 83 (03) :324-334

← 1 2 →