Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy

被引：98

作者：

Allen, Jonathan E. ^{[1
]}

Perea, Daniel E. ^{[1
]}

Hemesath, Eric R. ^{[1
]}

Lauhon, Lincoln J. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 30期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; DOPED SILICON NANOWIRES; PROBE FORCE MICROSCOPY; SEMICONDUCTOR NANOWIRES; SINGLE; ELECTRONICS; IMPURITIES; TRANSPORT; DEPLETION; POLYMERS;

D O I：

10.1002/adma.200803865

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Scanning photocurrent microscopy (SPCM) is used in semiconductor nanowire devices to establish quantitative potential profiles correlated with nonuniformities in electrical resistivity. Surface doping leads to a nonuniform axial photocurrent (a). Surface etching improves the uniformity of the local photocurrent (b) and reduces the radial and axial carrier concentration gradients (c, blue curve after etching).

引用

页码：3067 / +

页数：7

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