CoSi2 formation in the presence of interfacial silicon oxide

被引：39

作者：

Detavernier, C

Van Meirhaeghe, RL

Cardon, F

Donaton, RA

Maex, K

机构：

[1] Univ Ghent, Lab Kristallog Studie Vaste Stof, Vakgrp Vaste Stof Wetenschappen, B-9000 Ghent, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, INSYS, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 20期

关键词：

D O I：

10.1063/1.123969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evidence is presented that a reactive capping layer may influence the interfacial reaction in a thin film diffusion system. As a prototype system, we describe the CoSi2 formation in the Ti/Co/SiOx/Si system. We observed that Ti from the capping layer transforms the SiOx diffusion barrier into a CoxTiyO2 diffusion membrane, initiating silicide formation. The CoSi2 layer that is formed has a preferential epitaxial orientation. The epitaxial quality is dependent on annealing temperature, Co and Ti thickness. The epitaxial growth may be explained by a combination of Ti-interlayer mediated epitaxy and oxide mediated epitaxy. (C) 1999 American Institute of Physics. [S0003-6951(99)01720-9].

引用

页码：2930 / 2932

页数：3

共 8 条

[1] The influence of capping layer type on cobalt salicide formation in films and narrow lines [J].