SILICIDE FORMATION FOR CO/TI/SI STRUCTURES PROCESSED BY RTP UNDER VACUUM

被引：22

作者：

SETTON, M

VANDERSPIEGEL, J

机构：

[1] UNIV PENN,DEPT ELECT ENGN,PHILADELPHIA,PA 19104

[2] ECOLE NATL SUPER PHYS GRENOBLE,MAT & GENIE PHYS LAB,CNRS,UA 1109,ST MARTIN DHERES,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90520-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：62 / 71

页数：10

相关论文

共 14 条

[1] 1ST NUCLEATION RULE FOR SOLID-STATE NUCLEATION IN METAL-METAL THIN-FILM SYSTEMS
BENE, RW
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 529 - 531
[2] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS
BEYERS, R
SINCLAIR, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245
[3] INTERACTIONS OF CO THIN-FILMS WITH SI SUBSTRATES
COULMAN, B
BROADBENT, EK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1419 - 1420
[4] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM
GIBSON, JM
BEAN, JC
POATE, JM
TUNG, RT
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108
[5] MARKIV VY, 1966, RUSS METALL, V3, P118
[6] SELF-ALIGNED COBALT DISILICIDE FOR GATE AND INTERCONNECTION AND CONTACTS TO SHALLOW JUNCTIONS
MURARKA, SP
FRASER, DB
SINHA, AK
LEVINSTEIN, HJ
LLOYD, EJ
LIU, R
WILLIAMS, DS
HILLENIUS, SJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2108 - 2115
[7] INSITU RESISTIVITY MEASUREMENT OF COBALT SILICIDE FORMATION
OTTAVIANI, G
TU, KN
PSARAS, P
NOBILI, C
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2290 - 2294
[8] SILICIDE FORMATION FROM TERNARY METAL METAL SILICON SYSTEMS
SETTON, M
VANDERSPIEGEL, J
[J]. THIN SOLID FILMS, 1988, 156 (02) : 351 - 363
[9] SETTON M, 1987, P WORKSHOP REFRACTOR, P145
[10] VANDEHOVE L, 1988, THESIS KATHOLIEKE U