INSITU RESISTIVITY MEASUREMENT OF COBALT SILICIDE FORMATION

被引：25

作者：

OTTAVIANI, G

TU, KN

PSARAS, P

NOBILI, C

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,THORNWOOD,NY 10594

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.339486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2290 / 2294

页数：5

共 24 条

[1] STUDY OF COBALT-DISILICIDE FORMATION FROM COBALT MONOSILICIDE [J].

APPELBAUM, A ;

KNOELL, RV ;

MURARKA, SP .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1880-1886

[2] LATTICE IMAGING OF SILICIDE SILICON INTERFACES [J].

CHEN, LJ ;

MAYER, JW ;

TU, KN ;

SHENG, TT .

THIN SOLID FILMS, 1982, 93 (1-2) :91-97

[3]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[4]

HASCHIMOTO U, 1937, NIPPON KINZOKU GEKKA, V1, P135

[5] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J].

HENSEL, JC ;

TUNG, RT ;

POATE, JM ;

UNTERWALD, FC .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :913-915

[6]

ISHIWARA H, 1980, P S THIN FILM INTERF, V80, P159

[7]

Kuzma Y. B., 1964, RUSS J INORG CHEM+, V9, P373

[8]

KUZMA YB, 1964, ZH NEORG KHIM+, V9, P674

[9] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS [J].

LAU, SS ;

MAYER, JW ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4005-4010

[10] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J].

MURARKA, SP ;

READ, MH ;

DOHERTY, CJ ;

FRASER, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :293-301

← 1 2 3 →