STUDY OF COBALT-DISILICIDE FORMATION FROM COBALT MONOSILICIDE

被引：68

作者：

APPELBAUM, A

KNOELL, RV

MURARKA, SP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1880 / 1886

页数：7

共 16 条

[1]

APPELBAUM A, UNPUB

[2] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J].

GIBSON, JM ;

BEAN, JC ;

POATE, JM ;

TUNG, RT .

THIN SOLID FILMS, 1982, 93 (1-2) :99-108

[3] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS [J].

LAU, SS ;

MAYER, JW ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4005-4010

[4]

LEVINSTEIN HJ, 1983, Patent No. 4378628

[5] ELECTRICAL-PROPERTIES OF THIN CO2SI, COSI, AND COSI2 LAYERS GROWN ON EVAPORATED SILICON [J].

LIEN, CD ;

FINETTI, M ;

NICOLET, MA ;

LAU, SS .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :95-105

[6]

LUCCHESE CJ, 1982, VLSI SCI TECHNOLOGY, P232

[7]

MAURAKA SP, 1980, J VAC SCI TECHNOL, V17, P775

[8]

MURARKA SP, UNPUB

[9]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P108

[10]

Samsonov G.V., 1980, HDB REFRACTORY COMPO

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