Electronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes

被引：45

作者：

Wu, Chih-I ^{[1
,2
]}

Lin, Chang-Ting ^{[1
,2
]}

Lee, Guan-Ru ^{[1
,2
]}

Cho, Ting-Yi ^{[3
]}

Wu, Chung-Chih ^{[3
]}

Pi, Tun-Wen ^{[4
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[4] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 03期

关键词：

carrier density; molybdenum compounds; organic light emitting diodes; organic semiconductors; semiconductor thin films; ultraviolet photoelectron spectra; X-ray photoelectron spectra; MOO3;

D O I：

10.1063/1.3077170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origins of barrier lowering leading to high efficient organic light emitting devices with incorporation of molybdenum oxide (MoOx) in anode structures are investigated. Ultraviolet and x-ray photoemission spectra reveal that p-type doping effects in the organic films and carrier concentration increase at the anode interfaces cause the hole injection barrier lowering. The gap states, which help carrier injection from the anodes, resulted from the oxygen deficiency in MoOx due to the interaction of organic materials and MoOx.

引用

页数：4

共 21 条

[1] The catalytic active sites in partially reduced MoO3 for the hydroisomerization of 1-pentene and n-pentane [J].

Al-Kandari, H ;

Al-Kharafi, F ;

Al-Awadi, N ;

El-Dusouqui, OM ;

Ali, SA ;

Katrib, A .

APPLIED CATALYSIS A-GENERAL, 2005, 295 (01) :1-10

[2] Epitaxial growth and properties of MoOx(2<x<2.75) films -: art. no. 083539 [J].

Bhosle, V ;

Tiwari, A ;

Narayan, J .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)

[3] MoOx modified Ag anode for top-emitting organic light-emitting devices [J].

Cao, Jin ;

Jiang, XueYin ;

Zhang, ZhiLin .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[4] Effective connecting architecture for tandem organic light-emitting devices [J].

Chen, CW ;

Lu, YJ ;

Wu, CC ;

Wu, EHE ;

Chu, CW ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[5] High-performance organic thin-film transistors with metal oxide/metal bilayer electrode [J].

Chu, CW ;

Li, SH ;

Chen, CW ;

Shrotriya, V ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[6] Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors [J].

Guo, Yunlong ;

Liu, Yunqi ;

Di, Chong-an ;

Yu, Gui ;

Wu, Weiping ;

Ye, Shanghui ;

Wang, Ying ;

Xu, Xinjun ;

Sun, Yanming .

APPLIED PHYSICS LETTERS, 2007, 91 (26)

[7] White stacked electrophosphorescent organic light-emitting devices employing MoO3 as a charge-generation layer [J].

Kanno, H ;

Holmes, RJ ;

Sun, Y ;

Kena-Cohen, S ;

Forrest, SR .

ADVANCED MATERIALS, 2006, 18 (03) :339-+

[8] The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine interfaces [J].

Lee, Hyunbok ;

Cho, Sang Wan ;

Han, Kyul ;

Jeon, Pyung Eun ;

Whang, Chung-Nam ;

Jeong, Kwangho ;

Cho, Kwanghee ;

Yi, Yeonjin .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

[9] Improved hole-injection contact for top-emitting polymeric diodes [J].

Li, Juo-Hao ;

Huang, Jinsong ;

Yang, Yang .

APPLIED PHYSICS LETTERS, 2007, 90 (17)

[10] Encapsulation-free hybrid organic-inorganic light-emitting diodes [J].

Morii, Katsuyuki ;

Ishida, Masaya ;

Takashima, Takeshi ;

Shimoda, Tatsuya ;

Wang, Qing ;

Nazeeruddin, Md. Khaja ;

Graetzel, Michael .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

← 1 2 3 →