Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors

被引：26

作者：

Guo, Yunlong ^{[1
]}

Liu, Yunqi ^{[1
]}

Di, Chong-an ^{[1
]}

Yu, Gui ^{[1
]}

Wu, Weiping ^{[1
]}

Ye, Shanghui ^{[1
]}

Wang, Ying ^{[1
]}

Xu, Xinjun ^{[1
]}

Sun, Yanming ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2822443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the organic field-effect transistors based on copper phthalocyanine with a inserted layer of molybdenum oxide (MoO3). After applying a positive gate voltage of 100 V, the threshold voltage had a large shift from -11.8 to +66.2 V and the device operating model was changed from the enhancement model into the depletion one. A possible mechanism is believed to be originated from the stored charges in the interface between the thin MoO3 layer and the active layer. Largely reversible shift in the threshold voltage and retention time were also obtained in the devices by the programs used. (c) 2007 American Institute of Physics.

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页数：3

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[1] Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret [J].

Baeg, Kang-Jun ;

Noh, Yong-Young ;

Ghim, Jieun ;

Kang, Seok-Ju ;

Lee, Hyemi ;

Kim, Dong-Yu .

ADVANCED MATERIALS, 2006, 18 (23) :3179-+

[2] Efficient hybrid solar cells from zinc oxide nanoparticles and a conjugated polymer [J].

Beek, WJE ;

Wienk, MM ;

Janssen, RAJ .

ADVANCED MATERIALS, 2004, 16 (12) :1009-+

[3] Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors [J].

Briseno, AL ;

Roberts, M ;

Ling, MM ;

Moon, H ;

Nemanick, EJ ;

Bao, ZN .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (12) :3880-3881

[4] Large-scale complementary integrated circuits based on organic transistors [J].

Crone, B ;

Dodabalapur, A ;

Lin, YY ;

Filas, RW ;

Bao, Z ;

LaDuca, A ;

Sarpeshkar, R ;

Katz, HE ;

Li, W .

NATURE, 2000, 403 (6769) :521-523

[5] High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes [J].

Di, Chong-an ;

Yu, Gui ;

Liu, Yunqi ;

Xu, Xinjun ;

Wei, Dacheng ;

Song, Yabin ;

Sun, Yanming ;

Wang, Ying ;

Zhu, Daoben ;

Liu, Jian ;

Liu, Xinyu ;

Wu, Dexin .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (51) :16418-16419

[6] Control of threshold voltage of organic field-effect transistors with double-gate structures [J].

Iba, S ;

Sekitani, T ;

Kato, Y ;

Someya, T ;

Kawaguchi, H ;

Takamiya, M ;

Sakurai, T ;

Takagi, S .

APPLIED PHYSICS LETTERS, 2005, 87 (02)

[7] Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors [J].

Kagan, CR ;

Mitzi, DB ;

Dimitrakopoulos, CD .

SCIENCE, 1999, 286 (5441) :945-947

[8] White stacked electrophosphorescent organic light-emitting devices employing MoO3 as a charge-generation layer [J].

Kanno, H ;

Holmes, RJ ;

Sun, Y ;

Kena-Cohen, S ;

Forrest, SR .

ADVANCED MATERIALS, 2006, 18 (03) :339-+

[9] Organic field-effect transistors with polarizable gate insulators [J].

Katz, HE ;

Hong, XM ;

Dodabalapur, A ;

Sarpeshkar, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1572-1576

[10] Control of carrier density by self-assembled monolayers in organic field-effect transistors [J].

Kobayashi, S ;

Nishikawa, T ;

Takenobu, T ;

Mori, S ;

Shimoda, T ;

Mitani, T ;

Shimotani, H ;

Yoshimoto, N ;

Ogawa, S ;

Iwasa, Y .

NATURE MATERIALS, 2004, 3 (05) :317-322