Strong phonon charge carrier coupling in thermoelectric clathrates

被引:57
作者
Bentien, A [1 ]
Johnsen, S [1 ]
Iversen, BB [1 ]
机构
[1] Aarhus Univ, Dept Chem, DK-8000 Aarhus C, Denmark
关键词
D O I
10.1103/PhysRevB.73.094301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The origin of the very low and glasslike lattice thermal conductivity (kappa(L)) in highly crystalline clathrates has been intensely discussed. Guest atom tunneling, guest atom resonant scattering, disorder scattering, and soft potentials have been proposed as possible explanations. However, none of these models can explain the fundamental difference in kappa(L) between n- and p-type Ba8Ga16Ge30. Here we provide a comprehensive explanation through analysis of the physical properties of a range of Ba8In16-xGe30-y square(x+y) and Ba8Ni6-xGe40+x samples. We show that kappa(L) is intimately linked to the charge carriers, and propose that the glasslike kappa(L) is a consequence of strong phonon charge carrier coupling. In general the influence of charge carriers on kappa(L) has been studied only in relatively lightly doped and structurally ordered semiconducting materials. Clathrates constitute a class of materials with relatively large charge carrier concentrations in combination with structural disorder. This opens up the possibility of studying the influence of charge carriers on kappa(L) in the limit where kappa(L) and kappa(e) are of equal magnitude.
引用
收藏
页数:4
相关论文
共 29 条
[11]   NEW TERNARY CLATHRATE COMPOUNDS IN THE SYSTEMS BARIUM INDIUM/ZINC/CADMIUM GERMANIUM - ZINTL COMPOUNDS WITH PHASE WIDTH [J].
KUHL, B ;
CZYBULKA, A ;
SCHUSTER, HU .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1995, 621 (01) :1-6
[12]   THERMAL-CONDUCTIVITY RESONANCES OF ACCEPTOR STATES IN CUBIC SEMICONDUCTORS [J].
MAIER, J ;
SIGMUND, E .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (23) :4141-4151
[13]   PHONON-SCATTERING AT ELECTRONICALLY DEGENERATE DEFECT STATES - THEORETICAL APPROACH AND APPLICATIONS TO ACCEPTORS IN CUBIC SEMICONDUCTORS [J].
MAIER, J ;
SIGMUND, E .
PHYSICAL REVIEW B, 1986, 34 (08) :5562-5573
[14]   ULTRASONIC WAVE PROPAGATION IN DOPED N-GERMANIUM + P-SILICON [J].
MASON, WP ;
BATEMAN, TB .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1387-&
[15]  
Mott N. F., 1993, CONDUCTION NONCRYSTA
[16]   Semiconducting Ge clathrates: Promising candidates for thermoelectric applications [J].
Nolas, GS ;
Cohn, JL ;
Slack, GA ;
Schujman, SB .
APPLIED PHYSICS LETTERS, 1998, 73 (02) :178-180
[17]   Structural properties and thermal conductivity of crystalline Ge clathrates [J].
Nolas, GS ;
Weakley, TJR ;
Cohn, JL ;
Sharma, R .
PHYSICAL REVIEW B, 2000, 61 (06) :3845-3850
[18]   Raman scattering study of Ge and Sn compounds with type-I clathrate hydrate crystal structure [J].
Nolas, GS ;
Kendziora, CA .
PHYSICAL REVIEW B, 2000, 62 (11) :7157-7161
[19]   Structural, transport, magnetic, and thermal properties of Eu8Ga16Ge30 -: art. no. 214404 [J].
Paschen, S ;
Carrillo-Cabrera, W ;
Bentien, A ;
Tran, VH ;
Baenitz, M ;
Grin, Y ;
Steglich, F .
PHYSICAL REVIEW B, 2001, 64 (21)
[20]   THERMAL PHONON-SCATTERING AT SINGLET-TRIPLET DONOR STATES IN CUBIC SEMICONDUCTORS [J].
PUHL, A ;
SIGMUND, E ;
MAIER, J .
PHYSICAL REVIEW B, 1985, 32 (12) :8234-8241