Micromachined silicon cantilever beams for thin-film stress measurement

被引：12

作者：

Cardinale, GF ^{[1
]}

Howitt, DG ^{[1
]}

Clift, WM ^{[1
]}

McCarty, KF ^{[1
]}

Medlin, DL ^{[1
]}

Mirkarimi, PB ^{[1
]}

Moody, NR ^{[1
]}

机构：

[1] SANDIA NATL LABS,LIVERMORE,CA 95550

来源：

THIN SOLID FILMS | 1996年 / 287卷 / 1-2期

关键词：

silicon; stress; etching; Auger electron spectroscopy;

D O I：

10.1016/S0040-6090(96)08754-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a technique for micromachining silicon cantilever beams for thin-him stress measurement. The silicon microbeams were fabricated using a two-step etch process with potassium hydroxide (KOH) as the anisotropic etchant. The final beam geometry is optimized by using a 45% KOH solution and double-side polished silicon wafers as the starting material. We demonstrate a cleaning procedure that produces clean microbeam surfaces as verified by Auger electron spectroscopy. The effects of KOH concentration and temperature on the etch rate, etch rate sensitivity, and silicon surface roughness is discussed. We present results of compressive stress in boron nitride films grown by an ion-assisted process.

引用

页码：214 / 219

页数：6

共 12 条

[1]

BRANTLEY WA, 1973, J APPL PHYS, V44, P543

[2]

CADENHEAD R, 1995, J MICROCIRC ELECT PA, V18, P51

[3]

CARDINALE GF, 1996, IN PRESS DIAMOND REL

[4] STRESS DETERMINATION IN TEXTURED THIN-FILMS USING X-RAY-DIFFRACTION [J].