ELECTRONIC EFFECT ON THE ELASTIC-CONSTANT C44 OF N-TYPE SILICON

[1] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[2] EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE [J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1440 - &

[3] ELECTRONIC EFFECT IN THE ELASTIC CONSTANT C' OF SILICON [J]. APPLIED PHYSICS LETTERS, 1963, 2 (01) : 1 - 3

[4] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[5] Keyes R. W., 1968, SOLID STATE PHYS, V20, P37, DOI DOI 10.1016/S0081-1947(08)60217-9

[6] KEYES RW, 1961, IBM J RES DEV, V5, P226

[7] LOW-TEMPERATURE DEPENDENCE OF ELASTIC-CONSTANT C44 OF P-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (09) : 661 - 664

[8] EFFECT OF FREE CARRIERS ON ELASTIC-CONSTANTS OF PARA-TYPE SILICON AND GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5429 - 5441

[9] THEORY OF DONOR LEVELS IN SILICON [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1721 - 1721

[10] THEORY OF DONOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922

[1] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[2] EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE [J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1440 - &

[3] ELECTRONIC EFFECT IN THE ELASTIC CONSTANT C' OF SILICON [J]. APPLIED PHYSICS LETTERS, 1963, 2 (01) : 1 - 3

[4] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &

[5] Keyes R. W., 1968, SOLID STATE PHYS, V20, P37, DOI DOI 10.1016/S0081-1947(08)60217-9

[6] KEYES RW, 1961, IBM J RES DEV, V5, P226

[7] LOW-TEMPERATURE DEPENDENCE OF ELASTIC-CONSTANT C44 OF P-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (09) : 661 - 664

[8] EFFECT OF FREE CARRIERS ON ELASTIC-CONSTANTS OF PARA-TYPE SILICON AND GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5429 - 5441

[9] THEORY OF DONOR LEVELS IN SILICON [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1721 - 1721

[10] THEORY OF DONOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922