LOW-TEMPERATURE DEPENDENCE OF ELASTIC-CONSTANT C44 OF P-TYPE SILICON

被引：6

作者：

KIM, CK ^{[1
]}

RODRIGUEZ, S ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 09期

关键词：

D O I：

10.1016/0038-1098(77)90544-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：661 / 664

页数：4

共 7 条

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[6] ULTRASONIC-ATTENUATION DUE TO RESONANT INTERACTION WITH A DISTRIBUTION OF LEVEL SPLITTINGS OF GROUND-STATE OF SHALLOW ACCEPTORS IN GE [J].

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[7] ULTRASONIC ATTENUATION BY ACCEPTOR HOLES IN SI [J].

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