EFFECT OF FREE CARRIERS ON ELASTIC-CONSTANTS OF PARA-TYPE SILICON AND GERMANIUM

被引：23

作者：

KIM, CK ^{[1
]}

CARDONA, M ^{[1
]}

RODRIGUEZ, S ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.13.5429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5429 / 5441

页数：13

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[9] EFFECTS OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .1. ACOUSTICAL MODES [J].

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