Ultrafast Photoconductivity of Graphene Nanoribbons and Carbon Nanotubes

被引:118
作者
Jensen, Soren A. [1 ,2 ]
Ulbricht, Ronald [1 ]
Narita, Akimitsu [2 ]
Feng, Xinliang [2 ]
Muellen, Klaus [2 ]
Hertel, Tobias [4 ]
Turchinovich, Dmitry [2 ,3 ]
Bonn, Mischa [2 ]
机构
[1] FOM Inst AMOLF, NL-1098 XG Amsterdam, Netherlands
[2] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
[3] Tech Univ Denmark, DTU Fotonik, DK-2800 Lyngby, Denmark
[4] Univ Wurzburg, Inst Phys & Theoret Chem, D-97070 Wurzburg, Germany
关键词
Graphene nanoribbon; carbon nanotube; THz time-domain spectroscopy; photoconductivity; charge carrier dynamics; CARRIER DYNAMICS; EMISSION; EXCITONS; BULK;
D O I
10.1021/nl402978s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a comparative study of the ultrafast photoconductivity in two different forms of one-dimensional (1D) quantum-confined graphene nanostructures: structurally well-defined semiconducting graphene nanoribbons (GNRs) fabricated by a "bottom-up" chemical synthesis approach and semiconducting carbon nanotubes (CNTs) with a similar bandgap energy. Transient photoconductivities of both materials were measured using time-resolved terahertz spectroscopy, allowing for contact-free measurements of complex-valued photoconductivity spectra with subpicosecond time-resolution. We show that, while the THz photoresponse seems very different for the two systems, a single model of free carriers experiencing backscattering when moving along the long axis of the CNTs or GNRs provides a quantitative description of both sets of results, revealing significantly longer carrier scattering times for CNTs (ca. 150 fs) than for GNRs (ca. 30 fs) and in turn higher carrier mobilities. This difference can be explained by differences in band structures and phonon scattering and the greater structural rigidity of CNTs as compared to GNRs, minimizing the influence of bending and/or torsional defects on the electron transport.
引用
收藏
页码:5925 / 5930
页数:6
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