Colour detection using a buried double p-n junction structure implemented in the CMOS process

被引：57

作者：

Lu, GN

Chouikha, MB

Sou, G

Sedjil, M

机构：

[1] Lab. d'Electron. Analogique M., Univ. Paris Pierre et Marie Curie, 75252 Paris Cedex 05, Case 203

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 06期

关键词：

semiconductor devices; sensors;

D O I：

10.1049/el:19960337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present a novel technique for monochromatic colour detection. By using a buried double p-n junction (BDJ) structure, wavelength-dependent photocurrents I1 and I2 can be measured. And the incident light wavelength can be identified from the ratio I2/I1. The device operation was verified with a test circuit implemented in CMOS process.

引用

页码：594 / 596

页数：3