Origin of sharp lines in photoluminescence emission from submonolayers of InAs in GaAs

被引：17

作者：

Tran, CA ^{[1
]}

Ares, RA ^{[1
]}

Karasyuk, VA ^{[1
]}

Watkins, SP ^{[1
]}

Letourneau, G ^{[1
]}

Leonelli, R ^{[1
]}

机构：

[1] UNIV MONTREAL,DEPT PHYS,MONTREAL,PQ H3C 3J7,CANADA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.55.4633

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Very sharp and intense low-temperature photoluminescence (PL) emission is reported from submonolayers of InAs in GaAs grown by flow modulation epitaxy at 50 Torr using trimethylindium and tertiarybutylarsine. InAs coverages from 0.25 to 1.0 monolayers were systematically studied using low temperature FL, and photoluminescence excitation spectroscopy and temperature-dependent, time-resolved FL. The observed PL linewidths and energies are satisfactorily explained within a two-dimensional (2D) quantum well picture over all coverages. In these ultrathin structures we see confirmation of existing models which predict a smooth transition of the PL linewidth to zero in the limit of extremely thin wells. The possibility of weak OD localization of excitons by thickness variations in the submonolayer samples is discussed.

引用

页码：4633 / 4638

页数：6

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