Two-Dimensional Charge Transport in Disordered Organic Semiconductors

被引：98

作者：

Brondijk, J. J. ^{[1
]}

Roelofs, W. S. C. ^{[2
,3
]}

Mathijssen, S. G. J. ^{[2
,3
]}

Shehu, A. ^{[4
]}

Cramer, T. ^{[4
]}

Biscarini, F. ^{[4
]}

Blom, P. W. M. ^{[1
,5
]}

de Leeuw, D. M. ^{[1
,3
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[4] CNR ISMN, Inst Nanostruct Mat, I-40129 Bologna, Italy

[5] Holst Ctr, NL-5656 AE Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 05期

关键词：

MOBILITY;

D O I：

10.1103/PhysRevLett.109.056601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides access to a previously unexplored charge-transport regime and is reflected by a reduced temperature dependence of the transfer curves of organic monolayer transistors.

引用

页数：5

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