Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films:: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth -: art. no. 023597

The ability to crystallize thin amorphous Si layers into large grain Si can lead to significant improvements in Si solar cells and thin-film transistors. Here we report on the effect of the hydrogen content in as-grown films on the crystallization kinetics, surface morphology, and grain growth for hot wire chemical-vapor-deposited a-Si:H films crystallized by rapid thermal annealing (RTA). At RTA temperatures > 750 degrees C for high-hydrogen-content films, we observe the explosive evolution of hydrogen, with a resultant destruction of the film. Little or no damage is observed for films containing low hydrogen content. At a lower RTA temperature (600 degrees C), the films remain intact with similar morphologies. At this same lower RTA temperature, both the incubation time and crystallization time decrease, and the grain size as measured by x-ray diffraction increases with decreasing hydrogen film content. Measurements of the crystallization time versus H evolution time indicate that the vast majority of the hydrogen must evolve from both films before crystallization commences. To examine the relationship between hydrogen evolution and crystallization, a two-step annealing process was utilized. For the high hydrogen content films, the final grain size increases if a large portion of the hydrogen is driven out at temperatures well below the crystallization temperature. (c) 2006 American Institute of Physics.