Doping Silicon Nanocrystals with Boron and Phosphorus

被引：32

作者：

Pi, Xiaodong ^{[1
,2
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF NANOMATERIALS | 2012年 / 2012卷

基金：

中国国家自然科学基金;

关键词：

DOPED SI NANOCRYSTALS; GLASS THIN-FILMS; POROUS SILICON; QUANTUM DOTS; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; LUMINESCENCE; NANOPARTICLES; ABSORPTION; INKS;

D O I：

10.1155/2012/912903

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for Band P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.

引用

页数：9

共 56 条

[1] The preparation of a phosphorus doped silicon film from phosphorus containing silicon nanoparticles [J].